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Proceedings Paper

Raman Scattering From Rapid Thermally Annealed Tungsten Silicide Thin Films
Author(s): Howard E. Jackson; Joseph T. Boyd; U. Ramabadran; R. Vuppuladhadium
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Paper Abstract

Raman scattering as a technique for studying the formation of tungsten silicide is discussed. The tungsten silicide films were formed at temperatures up to 1350 C by rapid thermally annealing for 20 seconds tungsten films which had previously been sputter deposited on silicon substrates. The Raman data are correlated with sheet resistance measurements and scanning electron microscopy to show that rapid thermal annealing at higher temperatures for shorter times provides lower resistance tungsten silicide than reported in previous work.

Paper Details

Date Published: 19 January 1988
PDF: 4 pages
Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); doi: 10.1117/12.941943
Show Author Affiliations
Howard E. Jackson, University of Cincinnati (United States)
Joseph T. Boyd, University of Cincinnati (United States)
U. Ramabadran, University of Cincinnati (United States)
R. Vuppuladhadium, University of Cincinnati (United States)

Published in SPIE Proceedings Vol. 0822:
Raman and Luminescence Spectroscopy in Technology
Fran Adar; James E. Griffiths, Editor(s)

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