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Proceedings Paper

Selected Photoluminesence Transitions In Unintentionally Doped Inp Grown By Molecular Beam Epitaxy
Author(s): Shlomo Ovadia; A. Iliadis
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Paper Abstract

Photoluminesence data of unintentionally doped InP grown by molecular beam epitaxy are presented in order to clarify the origin of the 1.380 eV emission band and the 1.360 eV radiative transition. The 1.380 eV emission band was found to consist of a number of transitions which were attributed to Ca, Mg and C impurities. The SIMS analysis is in support of this result. The 1.360 eV radiative transition has been previously reported to be related to a phosphorus vacancy complex. Our results are in support of this observation. In addition, a split of 0.8 meV has been observed for this peak and was attributed to elastic strain. The effect of these transitions on the optical properties of the epitaxial InP is discussed.

Paper Details

Date Published: 19 January 1988
PDF: 4 pages
Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); doi: 10.1117/12.941932
Show Author Affiliations
Shlomo Ovadia, University of Maryland (United States)
A. Iliadis, University of Maryland (United States)


Published in SPIE Proceedings Vol. 0822:
Raman and Luminescence Spectroscopy in Technology
Fran Adar; James E. Griffiths, Editor(s)

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