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Proceedings Paper

Structural Properties Of Heteroepitaxial Semiconductor Islands By Raman Microscopy
Author(s): P M. F auchet; I. H. Campbell; M.Abdul Awal; E. H Lee
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Paper Abstract

We have used a Raman microprobe to characterize thin epitaxial layers of Ge and of GaAs on Ge, grown on [100] Si wafers patterned with SiO2 islands of various sizes. We have observed changes in the Raman spectra which we explain in terms of stress, crystal-line orientation and crystalline quality variations. Changes in stress were observed after laser recrystallization of Ge on Si or SiO2, whereas the asdeposited Ge films were unstressed. The GaAs layers were not oriented in the [100] direction and also showed stress variations. This information can then be used to optimize the growth conditions. Such structures, combining an optoelectronic material (GaAs) with the most widely used semiconductor (Si) are attractive for high speed data processing.

Paper Details

Date Published: 19 January 1988
PDF: 6 pages
Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); doi: 10.1117/12.941930
Show Author Affiliations
P M. F auchet, Princeton University (United States)
I. H. Campbell, Princeton University (United States)
M.Abdul Awal, AT&T Engineering Research Center (United States)
E. H Lee, AT&T Engineering Research Center (United States)


Published in SPIE Proceedings Vol. 0822:
Raman and Luminescence Spectroscopy in Technology
Fran Adar; James E. Griffiths, Editor(s)

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