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Proceedings Paper

Raman Spectroscopic Study Of Point Defects In Bulk GaAs
Author(s): J. Wagner; M. Ramsteiner; H. Seelewind
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Paper Abstract

Raman scattering with below-band-gap light has been used to study residual extrinsic acceptors as well as the intrinsic 78/203 meV double acceptor in bulk GaAs. Both electronic and vi-bronic excitations of these defects are observed in the low-temperature Raman spectrum. Electronic scattering of extrinsic acceptors - namely carbon and zinc - in semi-insulating material provides a quantitative tool for materials characterization with a detection limit of < 5 x 1014 acceptors/cm3. Polarized Raman spectra give insight into the electronic structure of the 78/203 meV acceptor.

Paper Details

Date Published: 19 January 1988
PDF: 6 pages
Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); doi: 10.1117/12.941928
Show Author Affiliations
J. Wagner, Fraunhofer-Institut fur Angewandte Festkorperphysik (Germany)
M. Ramsteiner, Fraunhofer-Institut fur Angewandte Festkorperphysik (Germany)
H. Seelewind, Fraunhofer-Institut fur Angewandte Festkorperphysik (Germany)

Published in SPIE Proceedings Vol. 0822:
Raman and Luminescence Spectroscopy in Technology
Fran Adar; James E. Griffiths, Editor(s)

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