Share Email Print

Proceedings Paper

Stepper Exposed Critical Dimension Tolerances Using The Vapor Jet Developer Nozzle
Author(s): Donald F Ditmer; Matthew V Hanson
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Resist image critical dimension control is a major concern in photolithographic processing. Many processing factors have first and second order effects making critical dimension control very difficult to maintain within reasonable tolerances. As the industry continually drives resist images to the sub micron geometries, it is no longer acceptable to have critical dimension variations across the wafer exceeding 10% of the nominal value if the process critical dimensions are to be maintained. Many of us are now facing the fact that process windows are collapsing to + 0.1 microns on critically defined levels. One of the first order factors in controlling and minimizing these critical dimension variations is the developing step. Currently, our production line at Inmos has two types of puddle developer tracks and a developer track with the vapor jet nozzle. Extensive evaluation and comparisons of these three systemsshow that superior control of both wafer to wafer and across wafer critical dimension uniformity is achieved with the system equipped with the vapor jet nozzle. Data shows that line width or space control of + .04 microns may be achieved across the wafer and wafer to wafer on flat (no topology) wafers with the vapor jet nozzle. Critical dimension control of + .06 microns is demonstrated on wafers with topology. These control limits are based on critical dimension measurements taken on material processed under standard production conditions.

Paper Details

Date Published: 29 June 1984
PDF: 9 pages
Proc. SPIE 0470, Optical Microlithography III: Technology for the Next Decade, (29 June 1984); doi: 10.1117/12.941917
Show Author Affiliations
Donald F Ditmer, Inmos Corporation (United States)
Matthew V Hanson, Inmos Corporation (United States)

Published in SPIE Proceedings Vol. 0470:
Optical Microlithography III: Technology for the Next Decade
Harry L. Stover, Editor(s)

© SPIE. Terms of Use
Back to Top