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Proceedings Paper

Submicron Optical Lithography: I-Line Lens And Photoresist Technology
Author(s): H L. Stover; M. Nagler; I. Bol; V. Miller
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Paper Abstract

This paper presents submicron resolution test data from a wafer-stepper with a prototype Zeiss I-line lens (436 nanometers). The system demonstrates high-quality 0.5-micron lines and spaces on flat surfaces, and easily obtains 0.75-micron lines and spaces on a variety of surfaces. SEM data on step coverage and depth of focus are presented; process dependencies and special features of the 436-manometer light interaction with photoresist are highlighted. Theoretical expectations for resolution and depth of focus are experimentally shown to be valid, and extrapolations for future lenses promise even deeper penetration into the submicron region.

Paper Details

Date Published: 29 June 1984
PDF: 12 pages
Proc. SPIE 0470, Optical Microlithography III: Technology for the Next Decade, (29 June 1984); doi: 10.1117/12.941878
Show Author Affiliations
H L. Stover, TRE Semiconductor Equipment Corporation (United States)
M. Nagler, TRE Semiconductor Equipment Corporation (United States)
I. Bol, TRE Semiconductor Equipment Corporation (United States)
V. Miller, TRE Semiconductor Equipment Corporation (United States)


Published in SPIE Proceedings Vol. 0470:
Optical Microlithography III: Technology for the Next Decade
Harry L. Stover, Editor(s)

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