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Proceedings Paper

HGcdTe Photovoltaic Array And Its Performance Correlation With Crystal Quality
Author(s): Fei -Ming Tong; Yang Xiuzhen; Ge Youfang; Huang Guijuan
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Paper Abstract

HgCdTe photovoltaic arrays are developed in 3-5 micron and 8-14 micron wavelength regions. The average detectivities of linear arrays are 3x1ecm.He/W and 2x1e am.Hz1VW, respectively. Good spectral response uniformity within different elements of an array is obtained. HgCdTe material is grown by the solid state recrystallization and traveling heater method with Te as the solvent. The device performance correlation with crystal quality is investigated. The I-V characteristics of HgCdTe photodiodes severely degrade due to precipitates. Active area expension of photovoltaic detector made on slices with high density substructure is obvious. The higher density of subgrain boundaries of the materials, the greater crosstalk of the arrays. Detector performance dependence on slice surface orientation is observed. It shows that n-p junction made on (111) plane is of preferable. Experiments show that the detectivity of photodiode has positive correlation with below-gap optical transmittance of slice. The optical transmittance can be used as one of selection criteria for materials.

Paper Details

Date Published: 10 November 1987
PDF: 6 pages
Proc. SPIE 0819, Infrared Technology XIII, (10 November 1987); doi: 10.1117/12.941837
Show Author Affiliations
Fei -Ming Tong, Shanghai Institute of Technical Physics (China)
Yang Xiuzhen, Shanghai Institute of Technical Physics (China)
Ge Youfang, Shanghai Institute of Technical Physics (China)
Huang Guijuan, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 0819:
Infrared Technology XIII
Irving J. Spiro, Editor(s)

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