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Proceedings Paper

Trilayer Resist Processing Using Spin-On Glass Intermediate Layers
Author(s): Satish K. Gupta; Carver G. Audain
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Paper Abstract

Of the many multilayer resist processes reported in recent years, the trilayer (RIE) resist process has emerged as the most versatile approach capable of defining high aspect ratio features in the micron to submicron regime using either optical, X-ray, or e-beam imaging. However, the relative complexity of the technique has impeded its widespread use in production. Implementation of trilayer resist pro-cessing would be greatly facilitated if spin-on glass (SOG) films were employed as the intermediate etch-mask (barrier) layer in place of the traditional sputtered or plasma deposited inorganic films. Allied Chemical's ACCUGLASS" 103 and ACCUGLASS" Ti-900 are SOG materials designed for use in trilayer resist processing. Cured films of 103 SOG are Si02-like while those from Ti-900 SOG are Ti02-like. In this paper, the properties of these SOG films and their use in trilayer processing are described. Results are presented for several trilayer resist processes carried out employing the SOG barrier layers and two new planarizing sublayer materials.

Paper Details

Date Published: 21 May 1984
PDF: 10 pages
Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); doi: 10.1117/12.941792
Show Author Affiliations
Satish K. Gupta, Electronic Chemicals Laboratory (United States)
Carver G. Audain, Electronic Chemicals Laboratory (United States)

Published in SPIE Proceedings Vol. 0469:
Advances in Resist Technology I
C. Grant Willson, Editor(s)

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