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Proceedings Paper

A New High Temperature Positive Photoresist HX-256
Author(s): Medhat A Toukhy; Joe Jech
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Paper Abstract

HX-256 resist is formulated to exhibit superior image stability at elevated temperatures. This allows the resist to be used in high temperature environment processes such as ion implantation and plasma etching. A standard post-bake at 130°C. is required to minimize image dimensional change at higher temperatures. 1-2 micron images with steep profiles are produced in conventional UV exposures in the region of 350-436nm. This paper discusses the spectral properties and sensitivity of HX-256 as well as its lithographic and thermal behavior. Some data on the plasma etch rates of this resist is also provided.

Paper Details

Date Published: 21 May 1984
PDF: 10 pages
Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); doi: 10.1117/12.941790
Show Author Affiliations
Medhat A Toukhy, Philip A. Hunt Chemical Corporation (United States)
Joe Jech, Philip A. Hunt Chemical Corporation (United States)

Published in SPIE Proceedings Vol. 0469:
Advances in Resist Technology I
C. Grant Willson, Editor(s)

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