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Proceedings Paper

Novel, Negative-Working Electron-Beam Resist
Author(s): Z. C.H Tan; R. C. Daly; S. S. Georgia
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Paper Abstract

Previous work showed a poly(allyl methacrylate)-co-(2-hydroxyethyl methacrylate) copolymer to be a high-sensitivity, high-resolution, high-temperature-resistant negative-working electron-beam and x-ray resist. Although such a resist has been particularly use-ful, sensitivity to environmental conditions has been observed on occasion. For example, intermittent image-edge scaling and/or gross scumming have been encountered. Two approaches were considered to minimize the occurrence of these problems: proper handling and processing of the resist and a major change in the chemical structure of the copolymer. As part of the second approach, a novel copolymer was synthesized and evaluated as a negative electron-beam resist. This material is relatively free from the image-edge scaling and the gross scumming noted above. It provides high sensitivity, submicrometer resolution, and adequate plasma-etch resistance, and the development and exposure lati-tudes of the resist are very good. After postbaking at 170°C, the resist shows good resistance to both chemical and dry etching processes.

Paper Details

Date Published: 21 May 1984
PDF: 9 pages
Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); doi: 10.1117/12.941787
Show Author Affiliations
Z. C.H Tan, Eastman Kodak Company (United States)
R. C. Daly, Eastman Kodak Company (United States)
S. S. Georgia, Eastman Kodak Company (United States)

Published in SPIE Proceedings Vol. 0469:
Advances in Resist Technology I
C. Grant Willson, Editor(s)

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