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Proceedings Paper

Negative Photoresists For Deep-UV Lithography
Author(s): Jer-Ming Yang; Kaolin Chiong; Hoh-Jiear Yan; Ming-Fea Chow
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Paper Abstract

Several negative resists which are capable of submicron resolution and high sensitivity using projection printers for one-micron design groundrules have been formulated. In these resists, aryl azides act as photoactive components and aqueous-base developable polymers as resins. Photolysis of resist films generates reactive aryl nitrenes, and crosslinking of resins takes place. The dissolution rate of exposed resist in base developers is decreased with Ro/R near 11, and generally more than 12% of azide loading is found necessary to minimize film loss. By simple spectral filtration and by choosing proper azides, these resists print various profiles useful for many applications. Their lithographic performance as well as some improvements of these resists are summarized.

Paper Details

Date Published: 21 May 1984
PDF: 10 pages
Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); doi: 10.1117/12.941785
Show Author Affiliations
Jer-Ming Yang, IBM General Technology (United States)
Kaolin Chiong, IBM General Technology Division (United States)
Hoh-Jiear Yan, IBM General Technology Division (United States)
Ming-Fea Chow, IBM General Technology Division (United States)

Published in SPIE Proceedings Vol. 0469:
Advances in Resist Technology I
C. Grant Willson, Editor(s)

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