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Proceedings Paper

Application Of Contrast-Enhanced Lithography To 1:1 Projection Printing
Author(s): B. F. Griffing; P. R. West; E. W. Balch
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Paper Abstract

Contrast-enhanced lithography (CEL) is a high-resolution, photolithographic technique which utilizes photobleachable materials in conjunction with conventional resist. The basic CEL concept, material requirements and applications to 10:1 lithography have been described previously. 1,2,3 In this paper we describe the application of this process to 1:1 projection lithography. A comparison of the defect density and linewidth control achieved with both conventional positive resist and CEL is made. These data are collected using electrical measurements on test structures fabricated with a Perkin-Elmer 321. The use of bleachable materials with conventional photoresists results in an increase in required exposure time for any given set of exposure conditions. An experimental analysis of the exposure time penalty vs. the line profile benefit will be presented. Another interesting application for CEL is maskmaking. With continued interest in 1:1 lithography, improved resolution in maskmaking is needed. While this application has not been investigated extensively, preliminary experiments suggest that significant improvements in resolution can be achieved when CEL is employed instead of the standard resist process. Experiments carried out using an Electromask 10:1 maskmaker will be presented.

Paper Details

Date Published: 21 May 1984
PDF: 8 pages
Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); doi: 10.1117/12.941782
Show Author Affiliations
B. F. Griffing, General Electric Corporate Research and Development Center (United States)
P. R. West, General Electric Corporate Research and Development Center (United States)
E. W. Balch, General Electric Aerospace Electronic Systems Division (United States)

Published in SPIE Proceedings Vol. 0469:
Advances in Resist Technology I
C. Grant Willson, Editor(s)

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