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Proceedings Paper

Effect of Developer Composition on Photoresist Performance
Author(s): William D. Hinsberg; Monica L. Gutierrez
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Paper Abstract

A series of experiments have been carried out to define how developer composition affects the performance of a positive photoresist. The relations between resist dissolution rates and the concentrations of sodium ion, hydroxide ion and buffer ions have been examined. An equation that relates the dissolution rate of unexposed photoresist to the concentration of sodium ion and hydroxide ion has been derived. The major compositions of several commercial developers are described. The lithographic performance of resist processed in these developers has been compared by use of characteristic curves. There is little difference in resist performance observed in the different developers when compared under equivalent conditions.

Paper Details

Date Published: 21 May 1984
PDF: 8 pages
Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); doi: 10.1117/12.941777
Show Author Affiliations
William D. Hinsberg, IBM Research Laboratory (United States)
Monica L. Gutierrez, IBM Research Laboratory (United States)

Published in SPIE Proceedings Vol. 0469:
Advances in Resist Technology I
C. Grant Willson, Editor(s)

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