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Proceedings Paper

Image Formation In The Sublayer Of A Multilayer Resist Structure
Author(s): D. Meyerhofer; L. K. White
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Paper Abstract

The exposure and development of PMMA sublayers used in multilayer resist processing schemes have been simulated. For thick planarization sublayers (>2 μm) diffraction of the deep-UV radiation produces significant exposure variations across the resist mask apertures. This effect leads to an edge-sharpening phenomena. The Fresnel diffraction approximation is used to calculate exposure variations within the sublayer and a modified SAMPLE program to obtain the sublayer image. Estimates of the wall profiles and dimensional deviations have been obtained for various isolated space feature sizes.

Paper Details

Date Published: 21 May 1984
PDF: 5 pages
Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); doi: 10.1117/12.941771
Show Author Affiliations
D. Meyerhofer, RCA Laboratories (United States)
L. K. White, RCA Laboratories (United States)

Published in SPIE Proceedings Vol. 0469:
Advances in Resist Technology I
C. Grant Willson, Editor(s)

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