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Proceedings Paper

Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater
Author(s): N Bar-Chaim; K Y Lau; I Ury; A. Yariv
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Paper Abstract

A low threshold buried heterostructure laser, a metal-semiconductor field effect transistor (MESFET), and a photodiode, have for the first time, been monolithically integrated on a semi-insulating GaAs substrate. This integrated optoelectronic circuit (IOEC) was operated as a rudimentary optical repeater. The incident optial signal is detected by the photodiode, amplified by the MESFET, and converted back to light by the laser. The gain bandwidth product of the repeater was measured to be 178 MHz.

Paper Details

Date Published: 10 May 1984
PDF: 4 pages
Proc. SPIE 0466, Optical Interfaces for Digital Circuits & Systems, (10 May 1984); doi: 10.1117/12.941564
Show Author Affiliations
N Bar-Chaim, Ortel Corporation (United States)
K Y Lau, Ortel Corporation (United States)
I Ury, Ortel Corporation (United States)
A. Yariv, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0466:
Optical Interfaces for Digital Circuits & Systems
Raymond Milano, Editor(s)

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