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Proceedings Paper

Planar Monolithic Fiber Optic Receiver Chip On A Gaas Semi-Insulating Substrate
Author(s): R. M Kolbas; J K Carney; M D. Longerbone; E L. Kalweit; S T. Reimer
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Paper Abstract

The fabrication and performance of a monolihtic optical receiver chip consisting of a pin photodiode and a transimpedance preamplifier on a GaAs semi-insulating substrate is reported. The epitaxial layers for the photodiode are grown by hydride vapor phase epitaxy and the circuit elements are fabricated by selective ion implantation in the semi-insulating substrate. The integration scheme results in a planar surface which simplifies the processing of optoelectronic integrated chips.

Paper Details

Date Published: 10 May 1984
PDF: 6 pages
Proc. SPIE 0466, Optical Interfaces for Digital Circuits & Systems, (10 May 1984); doi: 10.1117/12.941563
Show Author Affiliations
R. M Kolbas, Honeywell Corporate Physical Sciences Center (United States)
J K Carney, Honeywell Corporate Physical Sciences Center (United States)
M D. Longerbone, Honeywell Corporate Physical Sciences Center (United States)
E L. Kalweit, Honeywell Corporate Physical Sciences Center (United States)
S T. Reimer, Honeywell Corporate Physical Sciences Center (United States)


Published in SPIE Proceedings Vol. 0466:
Optical Interfaces for Digital Circuits & Systems
Raymond Milano, Editor(s)

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