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Proceedings Paper

Infrared Detector Based On An Integrated Silicon Thermopile
Author(s): P. M. Sarro; A. W.V Herwaarden
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Paper Abstract

A new thermal infrared detector fabricated using standard silicon IC technology and silicon micromachining is presented. The device consists of a 10-micron thick cantilever beam with one half covered by an absorbing layer and the other half containing a 44-strip p-Si/Al thermopile. The detectors have a responsivity (in vacuum) of 10 V/W and a relative detectivity D*, measured in air and for a 500 K blackbody source, of approximately 5 x 107 cmHzi/W.

Paper Details

Date Published: 10 September 1987
PDF: 6 pages
Proc. SPIE 0807, Passive Infrared Systems and Technology, (10 September 1987); doi: 10.1117/12.941446
Show Author Affiliations
P. M. Sarro, Delft University of Technology (The Netherlands)
A. W.V Herwaarden, Delft University of Technology (The Netherlands)

Published in SPIE Proceedings Vol. 0807:
Passive Infrared Systems and Technology
H. M. Lamberton, Editor(s)

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