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Proceedings Paper

The Characteristics Of Oxidation Of Polycrystalline Silicon Films In VLSI
Author(s): Wang Yang-yuan; Zhang Ai-zhen
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Paper Abstract

The characteristics of oxidation of undoped and heavily phosphorus doped poly-si films deposited by LPCVD has investigated in wide temperature using wet It It is showed that when the oxidation temperature is below 900°C, the characteristics of oxidation is markedly different with that of single-crystalline silicon. For undoped poly-si films, the oxidation is faster not only than (100) si but also than (111) si; for heavily phosphorus doped poly-si films, the oxidation is slower not only than (111) si but also than (100) si. While the range of temperature is 1000-1200°C, it could be described by Deal-Grove model except the initial stage, Xi, is much longer. It is related to, and can be explained by the existance of grain boundaries.

Paper Details

Date Published: 31 May 1984
PDF: 7 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941361
Show Author Affiliations
Wang Yang-yuan, Peking University (China)
Zhang Ai-zhen, Institute of Semiconductor Device (China)


Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)

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