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Proceedings Paper

Quantitative Analysis Of Phosphosilicate Glass Films On Silicon Wafers For Calibration Of X-Ray Fluorescence Spectrometry Standards
Author(s): Suzanne H. Weissman
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Paper Abstract

The phosphorus and silicon contents of phosphosilicate glass films deposited by chemical vapor deposition (CVD) on silicon wafers were determined. These films were prepared for use as x-ray fluorescence (XRF) spectrometry standards. The thin films were removed from the wafer by etching with dilute hydrofluoric acid, and the P and Si concentrations in solution were determined by inductively coupled plasma atomic emission spectroscopy (ICP). The calculated phosphorus concentration ranged from 2.2 to 12 wt %, with an uncertainty of 2.73 to 10.1 relative percent. Variation between the calculated weight loss (summation of P2O5 and SiO2 amounts as determined by ICP) and the measured weight loss (determined gravimetrically) aver-aged 4.9 %. Results from the ICP method, Fourier transform-infrared spectroscopy (FT-IR), dispersive infrared spectroscopy, electron microprobe, and x-ray fluorescence spectroscopy for the same samples are compared.

Paper Details

Date Published: 31 May 1984
PDF: 6 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941359
Show Author Affiliations
Suzanne H. Weissman, Sandia National Laboratories (United States)

Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)

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