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Proceedings Paper

Polarization Sensitive Raman Microprobe Studies Of Local Crystal Quality In Laser Annealed Silicon
Author(s): J. B. Hopkins; L. A. Farrow; G. J. Fisanick
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Paper Abstract

The technique of Raman microprobe spectroscopy has been extended to allow polarization sensitive characterization of local crystal quality with lateral mapping capability. Computer minimization algorithms have been utilized to invert Raman scattering intensity versus incident laser polarization information to local crystal orientation. This microprobe method has been applied to investigate the quality of laser annealed polysilicon over oxide films. During the course of laterally seeded epitaxial regrowth of silicon over the oxide film, it was found that the annealed crystal tends to develop large grains of varied size and orientation. Measurements of the local phonon frequency shift, which monitors strain in the material, show large variations across the structures. It is demonstrated that the strain inferred from phonon frequency shifts must be interpreted in terms of the local crystal orientation.

Paper Details

Date Published: 31 May 1984
PDF: 4 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941358
Show Author Affiliations
J. B. Hopkins, ATT/Bell Laboratories (United States)
L. A. Farrow, CSO/Bell Laboratories (United States)
G. J. Fisanick, ATT/Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)

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