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Proceedings Paper

Comparison Of Damage Profiles Obtained By Angle Lapping/Staining And Cross-Sectional Transmission Electron Microscopy
Author(s): C. H. Carter; W. Maszara; G. A. Rozgonyi; D. K. Sadana
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Paper Abstract

Research has been conducted in an attempt to correlate the results obtained by cross-sectional transmission electron microscopy (XTEM) to data obtained by angle lapping/ staining (ALS) or Secco etching of various ion implanted specimens. The results indicate that while the stain nearly always delineates the damage or amorphous/crystalline interface, it cannot distinguish between heavily damaged and amorphous regions. An unexpected result was the delineation of deep bands in the implanted wafers 2 to 11 times the LSS projected implantation range (Rp). These bands were found to occur in both neutral and dopant implants and their depth was found to be a mild function of dose but strong functions of temperature and implant ion mass.

Paper Details

Date Published: 31 May 1984
PDF: 8 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941356
Show Author Affiliations
C. H. Carter, North Carolina State University (United States)
W. Maszara, North Carolina State University (United States)
G. A. Rozgonyi, North Carolina State University and Microelectronics Center of North Carolina (United States)
D. K. Sadana, Microelectronics Center of North Carolina and North Carolina State University (United States)


Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)

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