Share Email Print
cover

Proceedings Paper

The Formation Of Amorphous Layers By The Implantation Of Arsenic And Phosphorus Into Silicon
Author(s): S. Prussin; David I. Margolese; Richard N. Tauber
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This study was directed toward exploring the relationship between the implant conditions and the depth and nature of the amorphous layers generated in silicon. High dose implants of As and P were used to generate buried ane surface amorphous layers at slightly higher than room temperature. The amorphous layer depths were measured and the depth-fluence and depth-energy relationships were compared with Brice's anfiysis. It was found that good fits weri obtained for a threshold damage density of 2.5 x 1020 keV cm-3 for As and 1.0 x 1021 keV cm-3 for P. Phosphorus ion implantations exhibted a greater tendency to generate buried amorphous layers as well as to generate amorphous layers which included a smaller fraction of the total fluence than was found for As ion implantations.

Paper Details

Date Published: 31 May 1984
PDF: 7 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941355
Show Author Affiliations
S. Prussin, TRW Electronics Systems Group (United States)
David I. Margolese, TRW Electronics Systems Group (United States)
Richard N. Tauber, TRW Electronics Systems Group (United States)


Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)

© SPIE. Terms of Use
Back to Top