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Proceedings Paper

Low Temperature Native Oxide Reduction From GaAs Surfaces
Author(s): W. E. Stanchina; J. M. Whelan; K. Chalermtiragool
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Paper Abstract

The objectives of this paper are three-fold: (1) to describe the necessary conditions for low temperature (i.e. < 500°C) reduction of native oxides from GaAs surfaces; (2) to describe a technique and procedure for establishing those conditions in H2 and possibly N2 gas; and (3) to present results of GaAs native oxide reduction including reduction rates and factors which affect them. Thermodynamic calculations of the necessary PH20/PH2 ratios (equivalent to P02) for oxide reduction from GaAs are presented. These same conditions would be sufficient to remove native oxides from GaInAs and from Ge. Experimental data will show that these atmospheres can be controlled and measured in flowing H2 and N2 through the use of calcia-stabilized zirconia solid electrolytic cells. H2 atmospheres have been obtained with less than 20 parts per billion of water vapor, low enough to reduce oxides of GaAs at temperatures as low as 270°C. Reduction rates have been determined for an anodic oxide on GaAs indicating that the rate as a function of temperature was proportional to exp(-26600/RT); and it was also directly proportional to the logarithm of the average oxide thickness.

Paper Details

Date Published: 31 May 1984
PDF: 9 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941351
Show Author Affiliations
W. E. Stanchina, University of Southern California (United States)
J. M. Whelan, University of Southern California (United States)
K. Chalermtiragool, University of Southern California (United States)


Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)

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