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Proceedings Paper

Hydrogen Implantation Into Gallium Arsenide: Range And Damage Distributions
Author(s): J. M. Zavada; H. A. Jenkinson; R. G. Wilson; D. K. Sadana
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Paper Abstract

This paper addresses the depth distributions of implanted hydrogen (1H) in n-type GaAs and the asso-ciated damage in the crystalline material. Secondary ion mass spectrometry measurements are used to demonstrate the presence of hydrogen atoms in the implanted material and to obtain the range profiles of these atoms for fluences of 5E14 and 5E15 cm-2. The nature and the distribution of the resulting lattice damage are studied using transmission electron microscopy. Elevated temperature implants are shown to alter the range profiles and to increase the TEM-visible damage.

Paper Details

Date Published: 31 May 1984
PDF: 5 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941350
Show Author Affiliations
J. M. Zavada, University of California (United States)
H. A. Jenkinson, U.S. Army Armament R&D Center (United States)
R. G. Wilson, Hughes Research Laboratories (United States)
D. K. Sadana, University of California (United States)

Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)

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