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Proceedings Paper

Infrared Properties Of Heavily Implanted Silicon, Germanium And Gallium Arsenide
Author(s): William G Spitzer; Lihyeh Liou; Kou-Wei Wang; Charles N. Waddell; Graham Hubler; Sook-Il Kwun
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Paper Abstract

A review of the techniques developed for using infrared reflection spectroscopy to study properties of heavily implanted semiconductors is presented. Several structural models are considered and calculations based on them are applied to measurements of implanted Si, Ge and GaAs. These comparisons of model calculations and measured spectra show how a number of important physical parameters can be obtained as well as new information concerning implantation-induced amorphous material.

Paper Details

Date Published: 31 May 1984
PDF: 10 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941346
Show Author Affiliations
William G Spitzer, University of Southern California (United States)
Lihyeh Liou, University of Southern California (United States)
Kou-Wei Wang, University of Southern California (United States)
Charles N. Waddell, University of Southern California (United States)
Graham Hubler, Naval Research Laboratory (United States)
Sook-Il Kwun, Seoul National University (Korea)


Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)

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