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Proceedings Paper

Electronic And Chemical Structure Of Metal-Silicon Interfaces
Author(s): P J Grunthaner; F J. Grunthaner
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Paper Abstract

This paper reviews our current understanding of the near-noble metal silicides and the interfaces formed with Si(100). Using x-ray photoemission spectroscopy, we compare the chemical composition and electronic structure of the room temperature metal-silicon and reacted silicide-silicon interfaces. The relationship between the interfacial chemistry and the Schottky barrier heights for this class of metals on silicon is explored.

Paper Details

Date Published: 31 May 1984
PDF: 8 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941343
Show Author Affiliations
P J Grunthaner, California Institute of Technology (United States)
F J. Grunthaner, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)

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