Share Email Print
cover

Proceedings Paper

Electrical Characteristics Of Amorphous Ni[sub]36[/sub]W[sub]64[/sub] Contacts On Silicon
Author(s): M. F. Zhu; I. Suni; M-A. Nicolet
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The Schottky barrier heights of amorphous Ni36W64 film contacts on n-type and p-type silicon are 0.65 eV and 0.45 eV, respectively. The barrier heights stay constant up to 550°C for a 30 min annealing in vacuum, but the interface, the leakage current, and the ideality factors degrade at 450°C. The contact resistivities of amorphous Ni-W films is (1.4 ± 0.3) 10-6 Ωcm2 on n+Si and (8.9 ± 0.2) 10-7 0cm2 on p+Si. The values remain stable after vacuum annealing for 30 min up to 600°C.

Paper Details

Date Published: 31 May 1984
PDF: 6 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941342
Show Author Affiliations
M. F. Zhu, California Institute of Technology (United States)
I. Suni, California Institute of Technology (United States)
M-A. Nicolet, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)

© SPIE. Terms of Use
Back to Top