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Proceedings Paper

Megavolt Ion Implantation Into Silicon
Author(s): P. F. Byrne; N. W. Cheung
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Paper Abstract

Formation of buried p-type and n-type layers in silicon by megavolt ion implantation has potential to replace epitaxial growth for buried layer formation. We present arguments for the use of ion implantation for buried layer formation.

Paper Details

Date Published: 31 May 1984
PDF: 4 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941340
Show Author Affiliations
P. F. Byrne, University of California (United States)
N. W. Cheung, University of California (United States)


Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)

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