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Proceedings Paper

Defects In Semiconductors Under Repetitive Medium Power Laser Irradiation Conditions
Author(s): M. Wautelet; C. Antoniadis; P. Quenon; L. D. Laude.
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Paper Abstract

When a semiconductor is irradiated many times by means of a medium power laser beam, it is expected that the cumulative effects of small phenomena occuring per pulse may give rise to dramatic effects. The problem is approached here via a theoretical analysis of the behaviour of defects under repetitive pulsed laser irradiation. Preliminary results indicate how demixing depends on the thermodynamical parameters for diffusion of defects. The roles of temperature gradients are analyzed carefully. The effects of optical excitation of localized states on the lifetime of devices are also discussed.

Paper Details

Date Published: 22 September 1987
PDF: 4 pages
Proc. SPIE 0801, High Power Lasers: Sources, Laser-Material Interactions, High Excitations, and Fast Dynamics, (22 September 1987); doi: 10.1117/12.941243
Show Author Affiliations
M. Wautelet, Universite de l'Etat (Belgium)
C. Antoniadis, Universite de l'Etat (Belgium)
P. Quenon, Universite de l'Etat (Belgium)
L. D. Laude., Universite de l'Etat (Belgium)


Published in SPIE Proceedings Vol. 0801:
High Power Lasers: Sources, Laser-Material Interactions, High Excitations, and Fast Dynamics
Ernst-Wolfgang Kreutz; A. Quenzer; Dieter Schuoecker, Editor(s)

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