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Proceedings Paper

Excimer laser induced transformation of Ge~Se thin films
Author(s): A. Jadin; M. Wautelet; C. Antoniadis; L. D. Laude
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Paper Abstract

Thin films of Ge or/and Se are irradiated by means of an excimer KrF laser beam. It is evidenced that such an irradiation gives rise to different transformations, when the energy density and the number of laser pulses are varied. Depending on the irradiation parameters and the starting stoichiometry of the films, either synthesis or ablation are observed. In the case of ablation, evaporation rates are very high. This cannot be explained via a purely thermal effect. A model based on electronic excitation is proposed.

Paper Details

Date Published: 22 September 1987
PDF: 4 pages
Proc. SPIE 0801, High Power Lasers: Sources, Laser-Material Interactions, High Excitations, and Fast Dynamics, (22 September 1987); doi: 10.1117/12.941235
Show Author Affiliations
A. Jadin, Universite de l'Etat (Belgium)
M. Wautelet, Universite de l'Etat (Belgium)
C. Antoniadis, Universite de l'Etat (Belgium)
L. D. Laude, Universite de l'Etat (Belgium)


Published in SPIE Proceedings Vol. 0801:
High Power Lasers: Sources, Laser-Material Interactions, High Excitations, and Fast Dynamics
Ernst-Wolfgang Kreutz; A. Quenzer; Dieter Schuoecker, Editor(s)

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