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Proceedings Paper

All-Optical Switching With GaAlAs Waveguides Via The Novel Photo-Induced Franz-Keldysh Effect
Author(s): Henning Fouckhardt; Karl Joachim Ebeling
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Paper Abstract

Intensity transmission of GaAlAs strip waveguides embedded in unbiased pn-junctions shows a strong nonlinearity at submilliwatt power levels due to the so-called photo-induced Franz-Keldysh effect. It represents a combination of two well-known effects : the photo-voltaic effect in semiconductor pn-junctions and the common Franz-Keldysh effect. The nonlinearity is typical for bleachable absorption. First-order theory and experiment show good agreement. The effect is used for all-optical switching. The transmitted light power of a probe beam is switched by about 3 dB due to the influence of a control beam at input light power levels of about 0.5 mW each. The switching dynamics is limited by RC time constants.

Paper Details

Date Published: 22 September 1987
PDF: 6 pages
Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); doi: 10.1117/12.941204
Show Author Affiliations
Henning Fouckhardt, Technische Universitat Braunschweig (Germany)
Karl Joachim Ebeling, Technische Universitat Braunschweig (Germany)


Published in SPIE Proceedings Vol. 0800:
Novel Optoelectronic Devices
M. J. Adams, Editor(s)

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