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State of the arts of Ga[sub]x[/sub]In[sub]1-x[/sub]As[sub]y[/sub]P [sub]1-y[/sub]-InP laser grown By Low-Pressure Metalorganic Chemical Vapor Deposition
Author(s): M. Razeghi; F. Omnes; P. Maurel; R. Blondeau; M. Krakowski
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Paper Abstract

Very high quality GaxIn1-xAsyP1-y (0 < x < 0.47, 0 < y < 1) lattice matched to InP heterojunctions, quantum-wells, and superlattices has been grown by the low pressure metal-organic chemical vapor deposition growth technique. High quality GaInAsP-InP double heterojunction lasers emitting at 1.3 μm and 1.55 μm have been fabricated with threshold current density as low as 430 A/cm2 and 500 Å/cm2, respectively, for a cavity length of 400 μm. Room temperature CW threshold current as low as 6 mA, 8 mA and 12 mA have been measured (for stripe buried devices with cavity length of 300 μm and stripe width of 1 μm) for 1.3 μm, 1.5 μm and 1.55 μm DEB laser, respectively. Phase-locked high power laser arrays of GaInAsP-InP emitting at 1.3 μm have been fabricated with material grown by two step low pressure metalorganic chemical vapor deposition.

Paper Details

Date Published: 22 September 1987
PDF: 9 pages
Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); doi: 10.1117/12.941180
Show Author Affiliations
M. Razeghi, Thomson C.S.F. (France)
F. Omnes, Thomson C.S.F. (France)
P. Maurel, Thomson C.S.F. (France)
R. Blondeau, Thomson C.S.F. (France)
M. Krakowski, Thomson C.S.F. (France)

Published in SPIE Proceedings Vol. 0800:
Novel Optoelectronic Devices
M. J. Adams, Editor(s)

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