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Proceedings Paper

Buried-Channel Insulated Gate Fets On MOCVD Grown Inp/InGaAs/InP
Author(s): E. A. Martin; K. P. Pande; M. A. diForte-Poisson; C. Brylinski; G. Colomer; M. Razeghi
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Paper Abstract

A novel heterojunction FET employing a buried channel is presented. Insulated-gate FETs have been fabricated on MOCVD grown InP/In0.53 Ga0.47 As. Plasma-enhanced CVD was used for the gate insulator deposition. These devices showed transconductances up to 90 mS/mm, and improved drain-current stability as compared with InP MISFETs employing SiO2.

Paper Details

Date Published: 22 April 1987
PDF: 5 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941062
Show Author Affiliations
E. A. Martin, Allied/Bendix Aerospace Technology Center (United States)
K. P. Pande, Sperry Corporation (United States)
M. A. diForte-Poisson, Thomson CSF Domain de Corbeville (France)
C. Brylinski, Thomson CSF Domain de Corbeville (France)
G. Colomer, Thomson CSF Domain de Corbeville (France)
M. Razeghi, Thomson CSF Domain de Corbeville (France)

Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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