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Proceedings Paper

Fabrication Process Of Resonant Tunneling Bipolar Transistor (RBT)
Author(s): A. Shibatomi; Y. Yamaguchi; T. Futatsugi; S. Muto; N. Yokoyama
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Paper Abstract

The resonant-tunneling Bipolar transistor (RBT) which has a high current gain of 20 was developed. RBTs are attracting a lot of interests as new functional and ultra high speed devices. We describe about material preparations and fabrication process technologies, and device characteristics.

Paper Details

Date Published: 22 April 1987
PDF: 4 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941061
Show Author Affiliations
A. Shibatomi, Fujitsu Laboratories Limited (Japan)
Y. Yamaguchi, Fujitsu Laboratories Limited (Japan)
T. Futatsugi, Fujitsu Laboratories Limited (Japan)
S. Muto, Fujitsu Laboratories Limited (Japan)
N. Yokoyama, Fujitsu Laboratories Limited (Japan)

Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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