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Proceedings Paper

Invited Paper Complementary HEMT Logic: Problems Of Threshold Voltage Control And Their Solutions
Author(s): Kazuhiko Matsumoto
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Paper Abstract

Various types of complementary HEMT logics thus far reported were compared from the point of view of the uniformity and the controllability of the threshold voltage of the FET. A selective crystal regrowth technique by MBE was developed for the complementary SISFET logic, which could grow a crystal with a smooth surface and did not affect the threshold voltage of the FET on the regrown crystal. A method how to control the flat-band voltage of GaAs SIS diode was reported, which preserve the feature of the uniformity of the flat-band voltage.

Paper Details

Date Published: 22 April 1987
PDF: 13 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941058
Show Author Affiliations
Kazuhiko Matsumoto, Electrotechnical Laboratory (Japan)


Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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