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Proceedings Paper

High Transconductance OGFETs
Author(s): G. Ebert; A. Colquhoun
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Paper Abstract

Submicron channel MESFETs with a special electrode arrangement, previously described by Colquhoun and Ebert l have been fabricated and characterized. This overlapped gate configuration allows the channel length of the device to be substantially shorter than the gate metallization length. An extrinsic transconductance of more than 240 mS/mm, and a cutoff frequency fmax of 20 GHz have been obtained. Special care was taken to avoid parasitic current saturation effects in the ungated drain region by using a gate recess.

Paper Details

Date Published: 22 April 1987
PDF: 5 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941057
Show Author Affiliations
G. Ebert, Telefunken electronic GmbH (West Germany)
A. Colquhoun, Telefunken electronic GmbH (West Germany)

Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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