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Proceedings Paper

Effects Of Growth Temperature And Off Oriented (100) Si Substrate On Properties Of CdTe Film Grown By MOCVD
Author(s): Min-Shyong Lin; Rey-Lin Chou; Kan-Sen Chou
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Paper Abstract

Specular CdTe films have been grown on (100), as well as 2°-6° off-oriented, Si substrates by low pressure metalorganic chemical vapor deposition method using dimethyl-cadmium (DMCd) and diethyl-telluride (DETe) as source materials. Growth temperatures range from 3450C to 4050C. 140K photoluminescence spectra show dominant sharp bound exciton related emission at 1.593 eV and weak defect related extrinsic band at 1.483 eV. The CdTe film grown at 375°C unity DMCd/DETe ratio has the lowest intensity ratio of I defect/I exciton. Sharp cubic phase structure with a preferential orientation of (111) is obtained for CdTe films grown at 355-375°C and for all 2°-6° off oriented (100) Si. Films grown at temperatures below 345°C and above 395°C exhibit x-ray diffraction patterns which contain extra hexagonal phase structures. Hall measurement and deep level transient spectroscopy are also used to characterize the electrical properties and defect levels of CdTe films. All grown CdTe are n-type with carrier concentration of about 1017cm-3 and mobilities of 500-600 cm2/V-sec at room temperature. Five levels, Ec-0.15, 0.25, 0.34, 0.57 and 0.76 eV, are observed in the near interface region of n-CdTe/P+-Si heterojunction.

Paper Details

Date Published: 22 April 1987
PDF: 5 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941054
Show Author Affiliations
Min-Shyong Lin, Industrial Technology Research Institute (Taiwan)
Rey-Lin Chou, National Tsing Hua University (Taiwan)
Kan-Sen Chou, National Tsing Hua University (Taiwan)

Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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