Share Email Print
cover

Proceedings Paper

Implant Profiles In GaP, GaAs, InP, And InSb: Influence Of Furnace And Rapid Thermal Annealing
Author(s): R . G. Wilson; S. w. Novak
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Profiles measured using secondary ion mass spectrometry for random and channeled implants of column II, IV, and VI elements in GaP, GaAs, InP, and InSb are decsribed. Depths and influence of furnace and lamp annealing on these profiles are emphasized.

Paper Details

Date Published: 22 April 1987
PDF: 2 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941045
Show Author Affiliations
R . G. Wilson, Hughes Research Laboratories (United States)
S. w. Novak, Charles Evans and Associates (United States)


Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

© SPIE. Terms of Use
Back to Top