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Proceedings Paper

Self-Aligned-Gate Digital AlGaAs/GaAs Modulation-Doped Field Effect Transistor (MODFET) Processing And Short Channel Effects
Author(s): A. N. Lepore; D. C. Radulescu; w. J. Schaff; P. J. Tasker; L. F. Eastman
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Paper Abstract

Self-aligned-gate digital AlGaAs/GaAs MODFETs have been fabricated with gate lengths from 1.3 to 0.35 pm. A "T"cross-section gate formed by reactive ion etching (RIE) is employed. Rapid thermal annealing (RTA) is used for implant activation and ohmic contact alloying. High temperature stability of layer structures grown by molecular-beam epitaxy (MBE)and of refractory gate metallization is presented. Finally, a comparison of device characteristics is made for pulse-doped MODFETs with and without superlattice buffers, with emphasis on short channel effects.

Paper Details

Date Published: 22 April 1987
PDF: 4 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941043
Show Author Affiliations
A. N. Lepore, Cornell University (United States)
D. C. Radulescu, Cornell University (United States)
w. J. Schaff, Cornell University (United States)
P. J. Tasker, Cornell University (United States)
L. F. Eastman, Cornell University (United States)


Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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