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Proceedings Paper

Lateral Patterning Of Quantum Well Structures Through Compositional Mixing
Author(s): E. A. Dobisz; H. G. Craighead; S. A. Schwarz; P. S. D. Lin; K. Kash; L. M. Schiavone; A. Scherer; J. P. Harbison; B. Tell
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Paper Abstract

Impurity and crystal defect induced compositional disordering of GaAs/AlxGai_xAs layered structures offers new microfabrication possibilities. By ion implantation one can control the location of the mixed region and control the degree of mixing. Specimens in this study were implanted with aluminum or silicon at energies and doses to give similar implanted-ion profiles. These were examined by cross-sectional transmission electron microscopy, secondary ion mass spectroscopy, and cathodoluminescence. The samples implanted with Al were found to partially disorder at a depth centered around the maximum damage peak. Silicon was found to disorder the material more completely than Al, and the disordered region extended to a depth greater than two times the projectile range. The effects of different annealing conditions on the disordering are discussed. We also implanted samples through high resolution ion masks and studied the disorder profile by TEM. The study revealed that the lateral disorder front follows that expected from the straggle of implanted ions. The feasibility of patterning with lateral resolution better than 30 nm is demonstrated. We have observed structure in spatially resolved cathodoluminescence, which we believe to arise from reduced dimensionality laterally patterned quantum wells.

Paper Details

Date Published: 22 April 1987
PDF: 9 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941042
Show Author Affiliations
E. A. Dobisz, Bell Communications Research (United States)
H. G. Craighead, Bell Communications Research (United States)
S. A. Schwarz, Bell Communications Research (United States)
P. S. D. Lin, Bell Communications Research (United States)
K. Kash, Bell Communications Research (United States)
L. M. Schiavone, Bell Communications Research (United States)
A. Scherer, Bell Communications Research (United States)
J. P. Harbison, Bell Communications Research (United States)
B. Tell, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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