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Proceedings Paper

Al1-XGaxAs/GaAs Superlattice Disordering By Ion-Implantation And Diffusion: A TEM Study Of Mechanisms
Author(s): B. C. De Cooman; C. B. Carter; J. R. Ralston
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Paper Abstract

The disordering of All-xGaxAs/GaAs superlattices by ion-implantation has been studied by cross-sectional electron microscopy. It has been found that the superlattice intermixing is extensive only when accompanied by superlattice amorphization or impurity diffusion. Stacking-fault tetrahedra, interstitial dislocation loops and microtwins are the main types of defects observed after implantation and annealing. The defects are stratified and interact with the periodic strain-field of the superlattice.

Paper Details

Date Published: 22 April 1987
PDF: 9 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941041
Show Author Affiliations
B. C. De Cooman, Cornell University (United States)
C. B. Carter, Cornell University (United States)
J. R. Ralston, Cornell University (United States)


Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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