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Proceedings Paper

Optical Absorption In Low P-Type Hg0.8Cd0.2Te Alloys
Author(s): Changhe Huang; Zhenzhong Yu; Dingyuan Tang
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Paper Abstract

Unctoped Hga8Cd0,2Te alloys were annealed near the P-N conversion temperature region. Samples with various hole concentration were obtained. Optical absorption and Hall meas-urement were taken in the temperature range 77-300K. The measured wavelength ranged from the absorption edge to 30 dam. The temperature dependence of the absorption for low P-type alloys was observed. As the temperature decreases down from room temperature, the absorption decreases at first, and then increases. The intervalence cross section has been calculated with a band structure parameter P of 8x10 eV-cm and a heavy hole mass of 0.55m. Hole concentration for these alloys has been estimated by the absorption coefficient at 77K. The hole concentration as the function of annealing condition can be explained by the model of the mercury vacancy. The influence of the annealing condition on the sharpness of the absorption edge was observed. The absorption edge for high purity samples is steeper than those annealed at 350 degrees C.

Paper Details

Date Published: 22 April 1987
PDF: 6 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941039
Show Author Affiliations
Changhe Huang, Shanghai Institute of Technical Physics (China)
Zhenzhong Yu, Shanghai Institute of Technical Physics (China)
Dingyuan Tang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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