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Proceedings Paper

Characteristics Of Nonselective Gaas/(A1,Ga)As Heterostructure Etching At Very Low Etch Rates
Author(s): M. Schneider; C. Colvard; K. Alavi; E. Kohn
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Paper Abstract

Wet etching of (Al,Ga)As material and heterojunctions with etch speeds in the range of 3 to 4 Å/second using a citric acid based etch have been investigated by studying etch profiles and surface film formation. Etch mechanisms are identified based on observations of isotropic and preferential etching and surface film characteristics.

Paper Details

Date Published: 22 April 1987
PDF: 9 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941037
Show Author Affiliations
M. Schneider, Siemens Research and Technology Laboratories (United States)
C. Colvard, Siemens Research and Technology Laboratories (United States)
K. Alavi, Siemens Research and Technology Laboratories (United States)
E. Kohn, Siemens Research and Technology Laboratories (United States)


Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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