Share Email Print
cover

Proceedings Paper

Vertical Sidewall Reactive Ion Etching (RIE) Of GaAs and Al[sub]x[/sub]Ga[sub]1[/sub]_[sub]x[/sub]AS (X=0.76) Using BC1[sub]3[/sub]/CC1[sub]2[/sub]F[sub]2[/sub]/He At Equal Rates
Author(s): Sayan D. Mukherjee
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A phenomenological study of Reactive Ion Etching (RIE) of GaAs and Al.Gal_xAS (x=0.76) using BC13/CC12F2/He has been carried out in order to obtain equal rates for etching the two semiconductors with vertical walls and smooth etched surfaces. The influences of 02 and H2, added purposely or inadvertently, the roles of added CC12F2 and He, and the effect of wafer size (loading effect) have been investigated on a limited basis. Equal etch rates, vertical (to tilde 1°) etched walls and smooth etched surfaces were attained for both GaAs and A1GaAs with and without a GaAs capping layer and with no special surface treatment of the wafers prior to etching in a commercially available RIE system used for the studies.

Paper Details

Date Published: 22 April 1987
PDF: 8 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941032
Show Author Affiliations
Sayan D. Mukherjee, General Electric Company (United States)


Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

© SPIE. Terms of Use
Back to Top