Proceedings Paper
Invited Paper Recent Developments In Reactive Plasma Etching Of III-V Compound Semiconductors| Format | Member Price | Non-Member Price |
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Paper Abstract
Reactive plasma etching is being increasingly utilized in the fabrication of III-V - based electronic and optoelectronic devices. The high resolution and control afforded by dry etching processes have led to their rapid move from research to manufacturing applications. This paper will review some of those applications, processes, progress and problems associated with reactive plasma etching of III-V materials.
Paper Details
Date Published: 22 April 1987
PDF: 12 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941031
Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)
PDF: 12 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941031
Show Author Affiliations
Evelyn L. Hu, University of California (United States)
Larry A. Coldren, University of California (United States)
Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)
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