Share Email Print

Proceedings Paper

Invited Paper Photochemical Cleaning And Epitaxy Of Si
Author(s): Y. Nara; T. Yamazaki; T. Sugii; R. Sugino; T. Ito; H. Ishikawa
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Photochemical effect on silicon surface cleaning and epitaxial film growth was investigated. Under ultraviolet light irradiation, the surface native oxide on the silicon substrate was removed at 730°C. An epitaxial film with high crystal quality was grown on the silicon substrate at a temperature as low as 540°C after thermal surface cleaning at980°C. The ultraviolet light irradiation seemed to be effective for gas-phase dissociation and surface reaction. Auto-doping was suppressed by using low temperature epitaxial growth and an almost ideal step junction was fabricated. A bipolar transistor having 65 nm epitaxially grown base layer was successfully operated.

Paper Details

Date Published: 22 April 1987
PDF: 8 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941030
Show Author Affiliations
Y. Nara, Fujitsu Laboratories Ltd. (Japan)
T. Yamazaki, Fujitsu Laboratoriesltd. (Japan)
T. Sugii, Fujitsu Laboratories Ltd. (Japan)
R. Sugino, Fujitsu Laboratories Ltd. (Japan)
T. Ito, Fujitsu Laboratories Ltd. (Japan)
H. Ishikawa, Fujitsu Laboratories Ltd. (Japan)

Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

© SPIE. Terms of Use
Back to Top