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Proceedings Paper

Formation And Nondestructive Characterization Of Ion Implanted Soi Layers
Author(s): J. Narayan; M. El Ghor; S. Y. Kim; K. Vedam; R. Manukonda; S. J. Pennycook
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Paper Abstract

High-temperature, oxygen ion implantation has been used to form buried oxide layers in silicon single crystals. The ion implantation and substrate variables, particularly the substrate temperature, were optimized to obtain silicon layers with appropriate microstructures near the surface. The as-implanted specimens were subsequently annealed at high temperatures to form buried Si02 layer with sharp interfaces and minimize dislocations in the top layers. These specimens were characterized by cross-section TEM and the results were compared with those obtained using spectroscopic ellipsometry (SE). We discuss the application of nondestructive SE technique in the characterization of silicon-on-insulator materials. Such techniques are absolutely essential for the fabrication of semiconductor devices.

Paper Details

Date Published: 22 April 1987
PDF: 6 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941028
Show Author Affiliations
J. Narayan, North Carolina State University (United States)
M. El Ghor, North Carolina State University (United States)
S. Y. Kim, The Pennsylvania State University (United States)
K. Vedam, The Pennsylvania State University (United States)
R. Manukonda, Honeywell Inc. (United States)
S. J. Pennycook, Oak Ridge National Laboratories (United States)

Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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