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Proceedings Paper

Formation Of Shallow Junctions With TiN[sub]x[/sub]O[sub]y[/sub]/TiSi[sub]2[/sub] Ohmic Contacts For Self-Aligned Silicide Technology
Author(s): Y. H. Ku; E. Louis; S. K. Lee; D. K. Shih; D. L. Kwong; C. O Lee; J. R. Yeargain
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Paper Abstract

The formations of TiNx0y/TiSi2 bilayer on Si by rapid thermal nitridation of titanium silicide in NH3 as well as p+/n shallow junction using doped silicide technique have been studied. Results of the chemical stability of TiNx0v/TiSi7/Si in dilute HF, the effectiveness of TiNx0, on TiSi2 as a diffusion barrier Mr Al boron diffusion in Si02/TiSi,2/Si structure, the surface dopant concentration at the TiSi7/Si interface, and the junction quality are presented. It is found that TiNx0y/TiSi2 bilayer has good chemical stability in dilute HF for 60 sec and acts as an effeentive contact barrier between Al and Si substrate up to 500°C, 30 min. Shallow p±n junction with high boron concentration at the TiSO/Si interface has been formed. P-1-/n diodes and p-channel LDD MOSFETs fabricated using this technology show good I-V characteristics with a reverse leakage current on the order of 10-9A/cm.

Paper Details

Date Published: 22 April 1987
PDF: 8 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941026
Show Author Affiliations
Y. H. Ku, The University of Texas at Austin (United States)
E. Louis, The University of Texas at Austin (United States)
S. K. Lee, The University of Texas at Austin (United States)
D. K. Shih, The University of Texas at Austin (United States)
D. L. Kwong, The University of Texas at Austin (United States)
C. O Lee, Motorola Inc. (United States)
J. R. Yeargain, Motorola Inc. (United States)


Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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