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Proceedings Paper

Planarization Of Multilevel Metalization Processes: A Critical Review
Author(s): Yue Kuo
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Paper Abstract

This paper presents a critical review of conventional and novel planarization processes such as Glass Flow, Etchback with or without a sacrificial layer, SOG, BSQ, Polyimide, Substrate-biased PECVD, and Pillars. Key issues in a planarization process, e.g., surface morphology, process simplicity and reliability, material characteristics, and etch control are discussed. A comparison of various planarization processes is tabulated. The future trend of the planarization technology is examined according to the above principles.

Paper Details

Date Published: 22 April 1987
PDF: 12 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941025
Show Author Affiliations
Yue Kuo, Data General Corp. (United States)


Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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