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Proceedings Paper

Invited Paper Is SOI Ready For Circuits Applications?
Author(s): D. Bensahel; D. Dutartre; M. Haond
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Paper Abstract

Silicon On Insulator technology is now reaching the point of actual application to a medium size circuit market. Three approaches have been extensively explored in order to obtain more or less defect-free SOI 4 in. wafers: zone melting recrystallization, formation and oxidation of porous-Si, and oxygen implantation. We review the advantages and drawbacks of these techniques and some electrical results obtained on circuits made on these SOI materials.

Paper Details

Date Published: 22 April 1987
PDF: 16 pages
Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941024
Show Author Affiliations
D. Bensahel, Centre National d'Etudes de Telecommunications (France )
D. Dutartre, Centre National d'Etudes de Telecommunications, (France)
M. Haond, Centre National d'Etudes de Telecommunications (France)


Published in SPIE Proceedings Vol. 0797:
Advanced Processing of Semiconductor Devices
Sayan D. Mukherjee, Editor(s)

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